Measuring parameters of semiconductor devices IPPP-1

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4-channel automated system for measuring parameters of semiconductors (including test structures on wafers)
The study of the I-V characteristics of 2, 3, 4-pole
Parameters of each channel Source / meter: - U: ± 2 V, ± 30 V (200 mA),
± 120 V (± 10 mA), I: ± 20, ± 200 nA, ± 2, ± 20, ± 200 μA, ± 2, ± 10 mA, (± 120 V), ± 20,
± 200 mA (± 30V)
Uncertainty of source and meter U, I ± 0.5%
U / I meter sensitivity: 10 μV / 0.1 pA
Charts, tables, texts, databases
RS-232C interface, computer software
Dimensions, weight: 450х266х444 mm, 23 kg
Power Supply: ~ 220 V, 120 VA

Measuring instrument of parameters of semiconductor devices IPPP-1

Measurement of parameters of semiconductor devices (RFP) and control of test structures on wafers during their production, analysis of marriage.
Synchronization of measurements with other measuring devices used in tests.
Limitation of current and voltage on the measured object according to the set threshold.
Cursor measurements.
Presentation of the CVC in the form of graphs and tables on the screen of a personal computer (PC).
Calculation of the calculated parameters of the SPP and their functional dependencies according to the measurement results.
Documentation and transmission of the results of measurements of the RFP parameters in electronic form via the local network of the enterprise
Formation of a report on the results.
Creating databases of standard tests for products.
Working with the analyzer does not require special programming knowledge.

Количество каналов, шт	от одного до четырёх
Диапазоны формирования/измерения напряжений каждого канала, В	±2 В; ±30 В (до ±200мА) и ±120 В (до ±10мА)
Погрешность установки/измерения напряжения, %	0,5 %
Диапазоны формирования/измерения тока каждого канала, мА	±0,00002мА; ±0,0002 мА; ±0,002 мА; ±0,02 мА; ±0,2 мА; ±2 мА; ±20 мА (до ±120 В) и ±200 мА (до ±30В)
Погрешность установки/измерения тока, %	0,5 %